VS-HFA08TB120PBF, vs-hfa08tb120-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 1 document number: 94045 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 8 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? designed and qualified according to jedec ? -jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa08tb120... is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rect ifier previously available. with basic ratings of 1200 v and 8 a continuous current, the vs-hfa08tb120... is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfre d features combine to offer designers a rectifier with lowe r noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfred vs-hfa08tb120... is ideally suited for applications in power supplies and power conversion systems (such as in verters), motor drives, and mumany other similar applications where high speed, high efficiency is needed. product summary package to-220ac i f(av) 8 a v r 1200 v v f at i f 2.4 v t rr typ. 28 ns t j max. 150 c diode variation single die anode 1 3 cathode to-220ac base cathode 2 available absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 8 a single pulse forward current i fsm 130 maximum repetitive forward current i frm 32 maximum power dissipation p d t c = 25 c 73.5 w t c = 100 c 29 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA08TB120PBF, vs-hfa08tb120-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 2 document number: 94045 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electriacl specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 8.0 a - 2.6 3.3 i f = 16 a - 3.4 4.3 i f = 8.0 a, t j = 125 c - 2.4 3.1 maximum reverse leakage current i rm v r = v r rated - 0.31 10 a t j = 125 c, v r = 0.8 x v r rated - 135 1000 junction capacitance c t v r = 200 v - 11 20 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 28 - ns t rr1 t j = 25 c i f = 8.0 a di f /dt = 200 a/s v r = 200 v -6395 t rr2 t j = 125 c - 106 160 peak recovery current i rrm1 t j = 25 c - 4.5 8.0 a i rrm2 t j = 125 c - 6.2 11 reverse recovery charge q rr1 t j = 25 c - 140 380 nc q rr2 t j = 125 c - 335 880 peak rate of recovery current during t b di (rec)m /dt1 t j = 25 c - 133 - a/s di (rec)m /dt2 t j = 125 c - 85 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc --1.7 k/w thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case st yle to-220ac hfa08tb120
VS-HFA08TB120PBF, vs-hfa08tb120-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 3 document number: 94045 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 150 c t j = 125 c t j = 25 c 0 10 2 4 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 6 8 0.01 0.1 1 10 100 0 v r - reverse voltage (v) i r - reverse current (a) t j = 150 c t j = 125 c t j = 25 c 1000 300 1200 900 600 t j = 100 c 10 100 1 10 100 1000 1 v r - reverse voltage (v) c t - junction capacitance (pf) 10 000 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-HFA08TB120PBF, vs-hfa08tb120-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 4 document number: 94045 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 160 120 20 100 1000 di f /dt (a/s) t rr (ns) 40 v r = 160 v t j = 125 c t j = 25 c 140 100 60 i f = 8 a i f = 4 a 80 20 16 0 100 1000 di f /dt (a/s) i rr (a) 8 i f = 8 a i f = 4 a v r = 160 v t j = 125 c t j = 25 c 4 12 1200 0 100 1000 di f /dt (a/s) q rr (nc) 800 i f = 8 a i f = 4 a v r = 160 v t j = 125 c t j = 25 c 400 1000 600 200 1000 100 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) v r = 160 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a 10
VS-HFA08TB120PBF, vs-hfa08tb120-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 5 document number: 94045 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA08TB120PBF, vs-hfa08tb120-n3 www.vishay.com vishay semiconductors revision: 10-jul-15 6 document number: 94045 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA08TB120PBF 50 1000 antistatic plastic tube vs-hfa08tb120-n3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220acpbf www.vishay.com/doc?95224 to-220ac-n3 www.vishay.com/doc?95068 2 - hexfred ? family 4 - current rating (08 = 8 a) 4 5 - package: 4 tb = to-220ac 3 - electron irradiated 6 7 - voltage rating (120 = 1200 v) 1 - vishay semiconductors product device code 5 1 3 2 4 6 7 vs- hf a 08 tb 120 pbf - environmental digit: pbf = lead (pb)-free and rohs-compliant -n3 = halogen-free, rohs-compliant, and totally lead (pb)-free
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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